High Performance and Stability of Double-Gate Hf-In-Zn-O Thin-Film Transistors Under Illumination
Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as small...
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Veröffentlicht in: | IEEE electron device letters 2010-09, Vol.31 (9), p.960-962 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2010.2051407 |