Temperature and Pressure Dependent Spectra of Raman Scattering at Resonantly Tuned Exciton States in 2H-MoS(2)

Resonance Raman scattering has been widely used to study electronic band structures and to investigate the nature of electron-phonon interactions in semiconductors [1,2]. A key issue in those studies is the role played by intermediate exciton states, which are usually explored by varying the incident photon energy across the interband transition energy [3]. Here we report on the temperature and pressure dependence of Stokes and anti-Stokes Raman spectra of a single crystal of 2H-M0S(2) as the energies of the A(1) and B(1) excitons, E(a1) and E(b1), are tuned to resonate with an exciting laser at E(L)=1., 96 eV [4]. The quasi-two- dimensional nature of the crystal structure enhances the binding energies of the AS excitonic pair. The relatively broad stability range of the excitons as a function of temperature and pressure makes this system attractive for a study of the correlation between the temperature and pressure-dependent resonant Raman scattering. Both routes are analyzed under a single framework and complemented by a calculated Stokes and anti-Stokes resonant Raman probability profiles as follows.