Structural and thermoelectric properties of HfNiSn half-Heusler thin films

The bulk thermoelectric properties of half-Heusler alloys have recently been extensively studied due to their potential as thermoelectric materials. However, only a few publications have been addressed on thin film systems. The present study investigated the structural and thermoelectric properties of HfNiSn half-Heusler alloy thin films grown at different substrate temperatures: 25 °C, 200 °C, and 400 °C. The crystalline phase and structural variation of the films were determined by X-ray diffraction and scanning electron microscopy. Polycrystalline thin films were obtained for utilizing lower substrate temperatures. The HfNiSn thin films exhibited preferred (111) orientation when substrate temperature was higher than 400 °C. The in-plane Seebeck coefficient and resistivity of HfNiSn thin films with preferred orientation were much lower than those of films without orientation. This implies the thermoelectric properties of HfNiSn alloy may exhibit anisotropic characteristics. The best Seebeck coefficient and power factor of HfNiSn thin films obtained in this work are −68 μV/K and 1.3 μW/K 2cm, respectively, measured at room temperature. The effects of partial substitution of Sn by Sb on thermoelectric properties of HfNiSn thin films were also studied with a “pseudo-combinatorial” approach.