Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory

Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory

The simple equations have been derived for main setting parameters of phase-change memory (PCM) devices. The calculations of threshold voltage and delay time are carried out based on emission model for an initial stage of electric breakdown in amorphous semiconductors. The temperature dependences of...

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Veröffentlicht in:Thin solid films 2010-08, Vol.518 (20), p.5656-5658
Hauptverfasser: Kozyukhin, S.A., Popov, A.I., Voronkov, E.N.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous semiconductors
Breakdown
Chalcogenides
Delay
Emission
Mathematical analysis
Mathematical models
Phase-change memory devices
Thin films
Threshold voltage
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Zusammenfassung:The simple equations have been derived for main setting parameters of phase-change memory (PCM) devices. The calculations of threshold voltage and delay time are carried out based on emission model for an initial stage of electric breakdown in amorphous semiconductors. The temperature dependences of threshold voltage agree with the experimental data for GST material.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.10.033