Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation

The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50 Ω cm by proton doping at the fluence rate and fluence of 4 × 10 11 ions/cm 2/s and 1 × 10 15 ions/cm 2, respectively. The resis...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2010-08, Vol.268 (15), p.2467-2469
Hauptverfasser: Nakagawa, Seiko, Ohta, Nobuaki
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Ohta, Nobuaki
description The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50 Ω cm by proton doping at the fluence rate and fluence of 4 × 10 11 ions/cm 2/s and 1 × 10 15 ions/cm 2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N +–H due to the proton implantation.
doi_str_mv 10.1016/j.nimb.2010.04.021
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source ScienceDirect Journals (5 years ago - present)
subjects Band spectra
Conductivity
Electrical resistivity
Fluence
Implantation
Infrared radiation
Pellets
Polyaniline
Polyanilines
Proton
Semiconductors
Spectra
title Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation
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