Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation
The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50 Ω cm by proton doping at the fluence rate and fluence of 4 × 10 11 ions/cm 2/s and 1 × 10 15 ions/cm 2, respectively. The resis...
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Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2010-08, Vol.268 (15), p.2467-2469 |
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container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
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creator | Nakagawa, Seiko Ohta, Nobuaki |
description | The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50
Ω
cm by proton doping at the fluence rate and fluence of 4
×
10
11 ions/cm
2/s and 1
×
10
15 ions/cm
2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N
+–H due to the proton implantation. |
doi_str_mv | 10.1016/j.nimb.2010.04.021 |
format | Article |
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Ω
cm by proton doping at the fluence rate and fluence of 4
×
10
11 ions/cm
2/s and 1
×
10
15 ions/cm
2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N
+–H due to the proton implantation.</description><identifier>ISSN: 0168-583X</identifier><identifier>EISSN: 1872-9584</identifier><identifier>DOI: 10.1016/j.nimb.2010.04.021</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Band spectra ; Conductivity ; Electrical resistivity ; Fluence ; Implantation ; Infrared radiation ; Pellets ; Polyaniline ; Polyanilines ; Proton ; Semiconductors ; Spectra</subject><ispartof>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-08, Vol.268 (15), p.2467-2469</ispartof><rights>2010 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c398t-a87931fe6ec228f9cbe1cd01ff84be4d74e589ab37c996e170476ade46917bad3</citedby><cites>FETCH-LOGICAL-c398t-a87931fe6ec228f9cbe1cd01ff84be4d74e589ab37c996e170476ade46917bad3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.nimb.2010.04.021$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,27911,27912,45982</link.rule.ids></links><search><creatorcontrib>Nakagawa, Seiko</creatorcontrib><creatorcontrib>Ohta, Nobuaki</creatorcontrib><title>Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation</title><title>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</title><description>The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50
Ω
cm by proton doping at the fluence rate and fluence of 4
×
10
11 ions/cm
2/s and 1
×
10
15 ions/cm
2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N
+–H due to the proton implantation.</description><subject>Band spectra</subject><subject>Conductivity</subject><subject>Electrical resistivity</subject><subject>Fluence</subject><subject>Implantation</subject><subject>Infrared radiation</subject><subject>Pellets</subject><subject>Polyaniline</subject><subject>Polyanilines</subject><subject>Proton</subject><subject>Semiconductors</subject><subject>Spectra</subject><issn>0168-583X</issn><issn>1872-9584</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9UE1LxDAUDKLguvoHPPXmqTXpVxLwIosfCwteFDwIIU1flyxtUpPsSv-9qatX3-Xxhplh3iB0TXBGMKlvd5nRQ5PlOAK4zHBOTtCCMJqnvGLlKVpEEksrVryfowvvdzhOVVQL9LE2wdl2r4K2JrFdoqz5uQ46TEmEjDXpH2a2yWj7SRrdawNJMyW9_UrBgNtOyehsiHw9jL00Qc5-l-isk72Hq9-9RG-PD6-r53Tz8rRe3W9SVXAWUskoL0gHNag8Zx1XDRDVYtJ1rGygbGkJFeOyKajivAZCcUlr2UJZc0Ib2RZLdHP0jRk-9-CDGLRX0McgYPdeUBYlOad1ZOZHpnLWewedGJ0epJsEwWJuUuzE3KSYmxS4FLHJKLo7iiD-cNDghFcajIJWO1BBtFb_J_8GJYh_pg</recordid><startdate>20100801</startdate><enddate>20100801</enddate><creator>Nakagawa, Seiko</creator><creator>Ohta, Nobuaki</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100801</creationdate><title>Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation</title><author>Nakagawa, Seiko ; Ohta, Nobuaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c398t-a87931fe6ec228f9cbe1cd01ff84be4d74e589ab37c996e170476ade46917bad3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Band spectra</topic><topic>Conductivity</topic><topic>Electrical resistivity</topic><topic>Fluence</topic><topic>Implantation</topic><topic>Infrared radiation</topic><topic>Pellets</topic><topic>Polyaniline</topic><topic>Polyanilines</topic><topic>Proton</topic><topic>Semiconductors</topic><topic>Spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakagawa, Seiko</creatorcontrib><creatorcontrib>Ohta, Nobuaki</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakagawa, Seiko</au><au>Ohta, Nobuaki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation</atitle><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle><date>2010-08-01</date><risdate>2010</risdate><volume>268</volume><issue>15</issue><spage>2467</spage><epage>2469</epage><pages>2467-2469</pages><issn>0168-583X</issn><eissn>1872-9584</eissn><abstract>The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50
Ω
cm by proton doping at the fluence rate and fluence of 4
×
10
11 ions/cm
2/s and 1
×
10
15 ions/cm
2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N
+–H due to the proton implantation.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.nimb.2010.04.021</doi><tpages>3</tpages></addata></record> |
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language | eng |
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source | ScienceDirect Journals (5 years ago - present) |
subjects | Band spectra Conductivity Electrical resistivity Fluence Implantation Infrared radiation Pellets Polyaniline Polyanilines Proton Semiconductors Spectra |
title | Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation |
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