Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation

The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50 Ω cm by proton doping at the fluence rate and fluence of 4 × 10 11 ions/cm 2/s and 1 × 10 15 ions/cm 2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N +–H due to the proton implantation.