Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films

Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films

Thin film field‐effect phototransistors (FETs) can be developed from bandgap‐tunable, solution‐processed, few‐layer reduced graphene oxide (FRGO) films. Large‐area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution‐processing technique such as spin‐coa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2010-11, Vol.22 (43), p.4872-4876
Hauptverfasser: Chang, Haixin, Sun, Zhenhua, Yuan, Qinghong, Ding, Feng, Tao, Xiaoming, Yan, Feng, Zheng, Zijian
Format: Artikel
Sprache:eng
Schlagworte:
bandgap
Equipment Design
Equipment Failure Analysis
field-effect
graphene
Graphite - chemistry
Membranes, Artificial
Optical Devices
Oxides - chemistry
phototransistor
solution processable
Solutions - chemistry
Transistors, Electronic
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thin film field‐effect phototransistors (FETs) can be developed from bandgap‐tunable, solution‐processed, few‐layer reduced graphene oxide (FRGO) films. Large‐area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution‐processing technique such as spin‐coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201002229