Near infrared photodetector based on polymer and indium nitride nanorod organic/inorganic hybrids
We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current–voltage characteristic of the hybrid device demonstrates the typical p– n heterojunction diode behavior, consisting of p-type polymer and n-type InN nanorods. The...
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Veröffentlicht in: | Scripta materialia 2010-09, Vol.63 (6), p.653-656 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We propose a nanostructured near infrared photodetector based on indium nitride (InN) nanorod/poly(3-hexylthiophene) hybrids. The current–voltage characteristic of the hybrid device demonstrates the typical
p–
n heterojunction diode behavior, consisting of
p-type polymer and
n-type InN nanorods. The device shows a photoresponse range of 900–1260
nm under various reverse biases. An external quantum efficiency of 3.4% at 900
nm operated at −10
V reverse bias was obtained, which is comparable with devices based on lead sulfide and lead selenide hybrid systems. |
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ISSN: | 1359-6462 1872-8456 |
DOI: | 10.1016/j.scriptamat.2010.05.035 |