Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD
Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffra...
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| Veröffentlicht in: | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2010-06, Vol.268 (11-12), p.1871-1874 |
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| container_issue | 11-12 |
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| container_title | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
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| creator | Fa, T. Chen, T.X. Yao, S.D. |
| description | Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffraction (HRXRD). Within the error range, the two methods gave fair agreement on the degree of strain. Comparing the two results, a possible correction due to a deviation for Vegard's law when large strain exists is discussed. |
| doi_str_mv | 10.1016/j.nimb.2010.02.014 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_760206463</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>760206463</sourcerecordid><originalsourceid>FETCH-LOGICAL-c279t-dc59a7a7ae157ba8967456378098f2bf94efaebdc7efb26ff40603c83c76e52c3</originalsourceid><addsrcrecordid>eNo1kM1OwzAQhH0AiVJ4AU6-cUq6sRM7OZYW2kpVkQpIvVmOY0Oq_BTbOfTt66iwe1hpZzQafQg9JRAnkLDZMe7qtowJhAeQGJL0Bk2CkEdZTg936N65I4TJaDZB1VJ7bdu6k77uO9wb7LW38rvvZIOr2vne_gvzBmJWbLqQWqwkxITsZiu5wz9jQu-8HZQfrMblGe9fPmYLLLsKr_eH_fIB3RrZOP34d6fo6-31c7GOtu-rzWK-jRThhY8qlRWSh9VJxkuZF4ynGaM8hyI3pDRFqo3UZaW4NiVhxqTAgKqcKs50RhSdoudr7sn2v4N2XrS1U7ppZKf7wQnOgABLGQ1OcnWq0NxZbcTJ1q20Z5GAGCmKoxgpipGiACICRXoB0o1njg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>760206463</pqid></control><display><type>article</type><title>Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD</title><source>Access via ScienceDirect (Elsevier)</source><creator>Fa, T. ; Chen, T.X. ; Yao, S.D.</creator><creatorcontrib>Fa, T. ; Chen, T.X. ; Yao, S.D.</creatorcontrib><description>Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffraction (HRXRD). Within the error range, the two methods gave fair agreement on the degree of strain. Comparing the two results, a possible correction due to a deviation for Vegard's law when large strain exists is discussed.</description><identifier>ISSN: 0168-583X</identifier><identifier>DOI: 10.1016/j.nimb.2010.02.014</identifier><language>eng</language><subject>Backscattering ; Crystal structure ; Deviation ; Diffraction ; Distortion ; Gallium nitrides ; Spectrometry ; Strain ; X-rays</subject><ispartof>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-06, Vol.268 (11-12), p.1871-1874</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c279t-dc59a7a7ae157ba8967456378098f2bf94efaebdc7efb26ff40603c83c76e52c3</citedby><cites>FETCH-LOGICAL-c279t-dc59a7a7ae157ba8967456378098f2bf94efaebdc7efb26ff40603c83c76e52c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27929,27930</link.rule.ids></links><search><creatorcontrib>Fa, T.</creatorcontrib><creatorcontrib>Chen, T.X.</creatorcontrib><creatorcontrib>Yao, S.D.</creatorcontrib><title>Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD</title><title>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</title><description>Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffraction (HRXRD). Within the error range, the two methods gave fair agreement on the degree of strain. Comparing the two results, a possible correction due to a deviation for Vegard's law when large strain exists is discussed.</description><subject>Backscattering</subject><subject>Crystal structure</subject><subject>Deviation</subject><subject>Diffraction</subject><subject>Distortion</subject><subject>Gallium nitrides</subject><subject>Spectrometry</subject><subject>Strain</subject><subject>X-rays</subject><issn>0168-583X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNo1kM1OwzAQhH0AiVJ4AU6-cUq6sRM7OZYW2kpVkQpIvVmOY0Oq_BTbOfTt66iwe1hpZzQafQg9JRAnkLDZMe7qtowJhAeQGJL0Bk2CkEdZTg936N65I4TJaDZB1VJ7bdu6k77uO9wb7LW38rvvZIOr2vne_gvzBmJWbLqQWqwkxITsZiu5wz9jQu-8HZQfrMblGe9fPmYLLLsKr_eH_fIB3RrZOP34d6fo6-31c7GOtu-rzWK-jRThhY8qlRWSh9VJxkuZF4ynGaM8hyI3pDRFqo3UZaW4NiVhxqTAgKqcKs50RhSdoudr7sn2v4N2XrS1U7ppZKf7wQnOgABLGQ1OcnWq0NxZbcTJ1q20Z5GAGCmKoxgpipGiACICRXoB0o1njg</recordid><startdate>201006</startdate><enddate>201006</enddate><creator>Fa, T.</creator><creator>Chen, T.X.</creator><creator>Yao, S.D.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201006</creationdate><title>Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD</title><author>Fa, T. ; Chen, T.X. ; Yao, S.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c279t-dc59a7a7ae157ba8967456378098f2bf94efaebdc7efb26ff40603c83c76e52c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Backscattering</topic><topic>Crystal structure</topic><topic>Deviation</topic><topic>Diffraction</topic><topic>Distortion</topic><topic>Gallium nitrides</topic><topic>Spectrometry</topic><topic>Strain</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fa, T.</creatorcontrib><creatorcontrib>Chen, T.X.</creatorcontrib><creatorcontrib>Yao, S.D.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fa, T.</au><au>Chen, T.X.</au><au>Yao, S.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD</atitle><jtitle>Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms</jtitle><date>2010-06</date><risdate>2010</risdate><volume>268</volume><issue>11-12</issue><spage>1871</spage><epage>1874</epage><pages>1871-1874</pages><issn>0168-583X</issn><abstract>Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffraction (HRXRD). Within the error range, the two methods gave fair agreement on the degree of strain. Comparing the two results, a possible correction due to a deviation for Vegard's law when large strain exists is discussed.</abstract><doi>10.1016/j.nimb.2010.02.014</doi><tpages>4</tpages></addata></record> |
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| subjects | Backscattering Crystal structure Deviation Diffraction Distortion Gallium nitrides Spectrometry Strain X-rays |
| title | Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T15%3A04%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Determination%20of%20tetragonal%20distortion%20of%20Al0.69In0.09Ga0.22N/GaN%20heterostructure%20by%20RBS/C%20and%20HRXRD&rft.jtitle=Nuclear%20instruments%20&%20methods%20in%20physics%20research.%20Section%20B,%20Beam%20interactions%20with%20materials%20and%20atoms&rft.au=Fa,%20T.&rft.date=2010-06&rft.volume=268&rft.issue=11-12&rft.spage=1871&rft.epage=1874&rft.pages=1871-1874&rft.issn=0168-583X&rft_id=info:doi/10.1016/j.nimb.2010.02.014&rft_dat=%3Cproquest_cross%3E760206463%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=760206463&rft_id=info:pmid/&rfr_iscdi=true |