Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD

Determination of tetragonal distortion of Al0.69In0.09Ga0.22N/GaN heterostructure by RBS/C and HRXRD

Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffra...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2010-06, Vol.268 (11-12), p.1871-1874
Hauptverfasser: Fa, T., Chen, T.X., Yao, S.D.
Format: Artikel
Sprache:eng
Schlagworte:
Backscattering
Crystal structure
Deviation
Diffraction
Distortion
Gallium nitrides
Spectrometry
Strain
X-rays
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Zusammenfassung:Rutherford backscattering/channeling spectrometry (RBS/C) was used to characterize the composition and structure of an Al0.69In0.09Ga0.22N/GaN crystalline film (I[ordm min =3.075%). The elastic strain induced tetragonal distortion value, e T , was determined by RBS/C and high resolution X-ray diffraction (HRXRD). Within the error range, the two methods gave fair agreement on the degree of strain. Comparing the two results, a possible correction due to a deviation for Vegard's law when large strain exists is discussed.
ISSN:0168-583X
DOI:10.1016/j.nimb.2010.02.014