Effect of the electrode structure on the electrical properties of alkoxide derived ferroelectric thin film

Effect of the thermal expansion coefficient of electrode on the electrical properties in lead zirconate titanate (PZT) with morphotropic phase boundary (Pb(Zr 0.53,Ti 0.47)O 3: MPB) composition film was demonstrated in this paper. The lanthanum nickel oxide (LaNiO 3: LNO) and lanthanum strontium cobalt oxide ((La 0.5,Sr 0.5)CoO 3: LSCO) was deposited by chemical solution deposition (CSD) as bottom electrode on Si wafer. Highly (100)-oriented LSCO layers were successfully prepared by CSD on Si wafer using (100)-oriented LNO layers as seeding layer for the crystal orientation control. As a result, (100) and (001) oriented PZT film was also successfully prepared on LSCO/LNO/Si stacking structure. The obtained dielectric and ferroelectric properties changed according to the thermal stress which was influenced by the bottom electrode thickness.