Probing Strain-Induced Electronic Structure Change in Graphene by Raman Spectroscopy

Two-phonon Raman scattering in graphitic materials provides a distinctive approach to probing the material’s electronic structure through the spectroscopy of phonons. Here we report studies of Raman scattering of the two-dimensional mode of single-layer graphene under uniaxial stress and which impli...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nano letters 2010-10, Vol.10 (10), p.4074-4079
Hauptverfasser: Huang, Mingyuan, Yan, Hugen, Heinz, Tony F., Hone, James
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Two-phonon Raman scattering in graphitic materials provides a distinctive approach to probing the material’s electronic structure through the spectroscopy of phonons. Here we report studies of Raman scattering of the two-dimensional mode of single-layer graphene under uniaxial stress and which implicates two types of modification of the low-energy electronic structure of graphene: a deformation of the Dirac cone and its displacement away from the K point.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl102123c