Charge-Selective Raman Scattering and Fluorescence Quenching by “Nanometal On Semiconductor” Substrates

Ag nanoparticles synthesized on n and p-type Si were shown to exhibit charge-selective surface-enhanced Raman scattering and fluorescence quenching. As revealed by electric force microscopy, the polarity and magnitude of the nanoparticle charge is controllable with the metal-semiconductor Fermi leve...

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Veröffentlicht in:Nano letters 2010-10, Vol.10 (10), p.3880-3887
Hauptverfasser: Bhatt, Karthik, Tan, Susheng, Karumuri, Sriharsha, Kalkan, A. Kaan
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Sprache:eng
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Zusammenfassung:Ag nanoparticles synthesized on n and p-type Si were shown to exhibit charge-selective surface-enhanced Raman scattering and fluorescence quenching. As revealed by electric force microscopy, the polarity and magnitude of the nanoparticle charge is controllable with the metal-semiconductor Fermi level difference and nanoparticle size. It is inferred that the Fermi level alignment is dominantly contributed by the charge-induced nanoparticle voltage. Nanoparticle charging also accounts for self-inhibition of coalescence during chemical reduction, allowing strong plasmon hybridization.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl101480n