Nearly massless electrons in the silicon interface with a metal film

We demonstrate the realization of nearly massless electrons in the most widely used device material, silicon, at the interface with a metal film. Using angle-resolved photoemission, we found that the surface band of a monolayer lead film drives a hole band of the Si inversion layer formed at the int...

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Veröffentlicht in:	Physical review letters 2010-06, Vol.104 (24), p.246803-246803, Article 246803
Hauptverfasser:	Kim, Keun Su, Jung, Sung Chul, Kang, Myung Ho, Yeom, Han Woong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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