Fiber Field-Effect Device Via In Situ Channel Crystallization

The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five‐order‐of‐magnitude decrease in resistivity of the novel metal‐insulator‐crystalline semiconductor structure. Using a post‐dra...

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Veröffentlicht in:Advanced materials (Weinheim) 2010-10, Vol.22 (37), p.4162-4166
Hauptverfasser: Danto, Sylvain, Sorin, Fabien, Orf, Nicholas D., Wang, Zheng, Speakman, Scott A., Joannopoulos, John D., Fink, Yoel
Format: Artikel
Sprache:eng
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Zusammenfassung:The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five‐order‐of‐magnitude decrease in resistivity of the novel metal‐insulator‐crystalline semiconductor structure. Using a post‐drawing crystallization process, the first tens‐of‐meters‐long single‐fiber field‐effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201000268