Fiber Field-Effect Device Via In Situ Channel Crystallization
The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five‐order‐of‐magnitude decrease in resistivity of the novel metal‐insulator‐crystalline semiconductor structure. Using a post‐dra...
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Veröffentlicht in: | Advanced materials (Weinheim) 2010-10, Vol.22 (37), p.4162-4166 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | The in situ crystallization of the incorporated amorphous semiconductor within the multimaterial fiber device yields a large decrease in defect density and a concomitant five‐order‐of‐magnitude decrease in resistivity of the novel metal‐insulator‐crystalline semiconductor structure. Using a post‐drawing crystallization process, the first tens‐of‐meters‐long single‐fiber field‐effect device is demonstrated. This work opens significant opportunities for incorporating higher functionality in functional fibers and fabrics. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201000268 |