Sub-ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field-Effect Transistors

A chemical receptor specific to traces of organophosphorus agents (OPs) has been synthesized and grafted to a silicon nanoribbon field‐effect transistor (SiNR‐FET). X‐ray structures illustrate the structural modifications of the receptor upon exposure to nerve agent simulants. A highly sensitive and selective detector of OPs can be obtained by monitoring the Drain‐Source current of the SiNR‐FET at an optimum back‐gate voltage as a function of time.