Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH’s), excited by femtosecond laser. Results showed that the terahertz emission from MDH’s can provide information on the GaAs/AlGaAs inte...

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Veröffentlicht in:	Optical materials 2010-05, Vol.32 (7), p.776-779
Hauptverfasser:	Takatori, Satoru, Minh, Pham Hong, Estacio, Elmer, Cadatal-Raduban, Marilou, Nakazato, Tomoharu, Shimizu, Toshihiko, Bailon-Somintac, Michelle, Somintac, Armando, Defensor, Michael, Gabayno, Jacqueline, Awitan, Fritz Christian B., Jaculbia, Rafael B., Garcia, Alipio, Ponseca, Carlito, Salvador, Arnel, Sarukura, Nobuhiko
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Communication, education, history, and philosophy Emission Exact sciences and technology Femtosecond Fundamental areas of phenomenology (including applications) Gallium arsenide Gallium arsenides Indium arsenides Modulation-doped heterostructure Nanocomposites Nanostructure Optical materials Optics Physics Physics literature and publications Quantum dot Semiconductor Terahertz
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Beschreibung
Zusammenfassung:	We report experimental work on the terahertz emission characteristics of InAs/GaAs quantum dot (QD) structures and GaAs/AlGaAs modulation-doped heterojunctions (MDH’s), excited by femtosecond laser. Results showed that the terahertz emission from MDH’s can provide information on the GaAs/AlGaAs interface quality while the QD structures have the potential for being intense terahertz emitters; rivaling the emission intensity of p-type bulk InAs.
ISSN:	0925-3467 1873-1252
DOI:	10.1016/j.optmat.2010.02.014