Diamond detectors for hadron physics research
The application of diamond for the detection of charged particles in atomic, nuclear and high-energy physics experiments is described. We compare the properties of three undoped diamond types, all of them produced by Chemical Vapor Deposition (CVD), in particular homoepitaxial single-crystal CVD Dia...
Gespeichert in:
Veröffentlicht in: | Diamond and related materials 2010-05, Vol.19 (5), p.358-367 |
---|---|
Hauptverfasser: | , , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The application of diamond for the detection of charged particles in atomic, nuclear and high-energy physics experiments is described. We compare the properties of three undoped diamond types, all of them produced by Chemical Vapor Deposition (CVD), in particular homoepitaxial single-crystal CVD Diamond (scCVDD), polycrystalline CVD Diamond (pcCVDD) grown on silicon, and CVD Diamond on Iridium (DoI) grown on the multi-layer substrate Ir/YSZ/Si001. The characteristics of the transient current (TC) signals generated from
241Am-α-particles in the samples are exploited to evaluate the potential of the diamond crystals for particle timing and spectroscopy applications. The TC technique (TCT) results are correlated to the dark conductivity and the structural defects of the bulk materials as well as to the morphology and roughness of the diamond surfaces. The deterioration of the sensors performance after heavy irradiations with 26
MeV protons, 20
MeV neutrons, and 10
MeV electrons is discussed by means of charge-collection efficiency results, TC technique, and optical absorption spectroscopy (OAS). The important role of the diamond signal processing is underlined, which influences both the quality of the CVDD characterization data as well as the in-beam performance of the diamond sensors. |
---|---|
ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2009.11.019 |