Improved tunneling controlled field emission of Boron carbon nitride nanofilm

Modified tunneling controlled field emission (TCFE) model is proposed using BCN nanofilm in order to reduce the effective potential barrier height compared with that of the conventional TCFE. The BCN nanofilm of 8–10 nm in thickness is grown on Pt layer so that C composition ratio of the BCN nanofilm is high near the substrate and low at the surface. This leads to a low potential barrier height at the interface between the BCN and substrate and a low vacuum level of the BCN at the surface. A reduction in the threshold electric field of the electron emission is demonstrated in the field emission characteristics.