Infiltration of silica colloidal crystals with molten salts and semiconductors under capillary forces

Infiltration of silica colloidal crystals with molten salts and semiconductors under capillary forces

A technique for filling pores of bulk and film silica colloidal crystals (artificial opals) with melts of salts (NaCl, AgI) and semiconductors (V 2O 5, InSb) having relatively high melting points ( T m = 500–800 °C) using capillary forces is suggested. The pore filling degrees of 70 ± 8 vol.% for Na...

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Veröffentlicht in:Journal of alloys and compounds 2010-03, Vol.492 (1), p.611-615
Hauptverfasser: Kurdyukov, D.A., Kartenko, N.F., Golubev, V.G.
Format: Artikel
Sprache:eng
Schlagworte:
Capillarity
Colloids
Crystals
Indium antimonides
Melt
Nanocomposite
Opal
Porosity
Salt
Semiconductor
Semiconductors
Silicon dioxide
Vanadium pentoxide
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Zusammenfassung:A technique for filling pores of bulk and film silica colloidal crystals (artificial opals) with melts of salts (NaCl, AgI) and semiconductors (V 2O 5, InSb) having relatively high melting points ( T m = 500–800 °C) using capillary forces is suggested. The pore filling degrees of 70 ± 8 vol.% for NaCl, 70 ± 4 vol.% for V 2O 5, 97 ± 3 vol.% for AgI, and 98 ± 3 vol.% for InSb have been achieved.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2009.11.193