High-performance W-band MMIC mixer module using GaAs metamorphic HEMT

High-performance W-band MMIC mixer module using GaAs metamorphic HEMT

In this letter, we report on a high‐performance 94‐GHz millimeter‐wave monolithic integrated circuit (MMIC) mixer module using 0.1‐μm metamorphic high electron mobility transistors. A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO‐RF isolat...

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Veröffentlicht in:Microwave and optical technology letters 2010-04, Vol.52 (4), p.815-817
Hauptverfasser: An, Dan, Kim, Sung-Chan, Rhee, Jin-Koo
Format: Artikel
Sprache:eng
Schlagworte:
Chip formation
Conversion
conversion loss
High electron mobility transistors
LO-RF isolation
Metamorphic
MHEMT
mixer module
Mixers
MMIC
Modules
Noise levels
Semiconductor devices
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Zusammenfassung:In this letter, we report on a high‐performance 94‐GHz millimeter‐wave monolithic integrated circuit (MMIC) mixer module using 0.1‐μm metamorphic high electron mobility transistors. A modified resistive mixer with a RF amplifier was proposed in this work for low conversion loss and high LO‐RF isolation. The MMIC mixer module was fabricated using a MMIC chip and CPW‐waveguide transitions. The fabricated mixer chip and module showed a low conversion loss of 6.3 and 9.5 dB, and LO‐RF isolations of 24.8 and 30.4 dB at 94 GHz, respectively. This results are superior to those of previously W‐band (75–110 GHz) MMIC mixers. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:815–817, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25081
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.25081