Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface

InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total...

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Veröffentlicht in:	Surface science 2010-07, Vol.604 (13), p.1127-1134
Hauptverfasser:	Aroutiounian, V.M., Gambaryan, K.M., Soukiassian, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antimony Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Density Density functional calculations Exact sciences and technology Growth III-V semiconductors Indium arsenide Liquid phase epitaxy Mathematical analysis Nanocomposites Nanomaterials Nanostructure Phosphorus Physics Pits Quantum dots Scanning electron microscopy Self-assembly Strain-induced quantum dots & pits Wavelengths
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