Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total...
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Veröffentlicht in: | Surface science 2010-07, Vol.604 (13), p.1127-1134 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total energy calculations. QDs average density ranges from 5 to 7
×
10
9
cm
−
2, with heights and widths having a Gaussian distribution with sizes from 5
nm to 15
nm and 10
nm to 40
nm respectively. The average pits density is (2–6)
×
10
10
cm
−
2 with dimensions ranging from 5–30
nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects. |
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ISSN: | 0039-6028 1879-2758 |
DOI: | 10.1016/j.susc.2010.03.027 |