Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface
InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total...
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| Veröffentlicht in: | Surface science 2010-07, Vol.604 (13), p.1127-1134 |
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| creator | Aroutiounian, V.M. Gambaryan, K.M. Soukiassian, P. |
| description | InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total energy calculations. QDs average density ranges from 5 to 7
×
10
9
cm
−
2, with heights and widths having a Gaussian distribution with sizes from 5
nm to 15
nm and 10
nm to 40
nm respectively. The average pits density is (2–6)
×
10
10
cm
−
2 with dimensions ranging from 5–30
nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects. |
| doi_str_mv | 10.1016/j.susc.2010.03.027 |
| format | Article |
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×
10
9
cm
−
2, with heights and widths having a Gaussian distribution with sizes from 5
nm to 15
nm and 10
nm to 40
nm respectively. The average pits density is (2–6)
×
10
10
cm
−
2 with dimensions ranging from 5–30
nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2010.03.027</identifier><identifier>CODEN: SUSCAS</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Antimony ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Density ; Density functional calculations ; Exact sciences and technology ; Growth ; III-V semiconductors ; Indium arsenide ; Liquid phase epitaxy ; Mathematical analysis ; Nanocomposites ; Nanomaterials ; Nanostructure ; Phosphorus ; Physics ; Pits ; Quantum dots ; Scanning electron microscopy ; Self-assembly ; Strain-induced quantum dots & pits ; Wavelengths</subject><ispartof>Surface science, 2010-07, Vol.604 (13), p.1127-1134</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-4e2f3ef2f4b0b9e8f5174638024daaa09e6a02d67acfe71c30108288c5978da3</citedby><cites>FETCH-LOGICAL-c362t-4e2f3ef2f4b0b9e8f5174638024daaa09e6a02d67acfe71c30108288c5978da3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.susc.2010.03.027$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22919791$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Aroutiounian, V.M.</creatorcontrib><creatorcontrib>Gambaryan, K.M.</creatorcontrib><creatorcontrib>Soukiassian, P.</creatorcontrib><title>Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface</title><title>Surface science</title><description>InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total energy calculations. QDs average density ranges from 5 to 7
×
10
9
cm
−
2, with heights and widths having a Gaussian distribution with sizes from 5
nm to 15
nm and 10
nm to 40
nm respectively. The average pits density is (2–6)
×
10
10
cm
−
2 with dimensions ranging from 5–30
nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects.</description><subject>Antimony</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Density</subject><subject>Density functional calculations</subject><subject>Exact sciences and technology</subject><subject>Growth</subject><subject>III-V semiconductors</subject><subject>Indium arsenide</subject><subject>Liquid phase epitaxy</subject><subject>Mathematical analysis</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Phosphorus</subject><subject>Physics</subject><subject>Pits</subject><subject>Quantum dots</subject><subject>Scanning electron microscopy</subject><subject>Self-assembly</subject><subject>Strain-induced quantum dots & pits</subject><subject>Wavelengths</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kE2LFDEQhoMoOK7-AU-5iHroMR_dnQS8LIMfCwsK7j3UpCs7GbqT2SSt-O_NOItH61JU8bxVvC8hrznbcsbHD8dtWYvbCtYWTG6ZUE_IhmtlOqEG_ZRsGJOmG5nQz8mLUo6sVW-GDQm7tJywhnhP4-pmhBpSpAu6A8RQlkIhTvQ-p1_1QJOnN_G6_Nh_pw8rxLoudEr1gkSIqTuFNjV5PeBf8h1n7D0ta_bg8CV55mEu-OqxX5G7z5_udl-7229fbnbXt52To6hdj8JL9ML3e7Y3qP3AVT9KzUQ_AQAzOAIT06jAeVTcyWZZC63dYJSeQF6Rt5ezp5weVizVLqE4nGeImNZi1SDHURsxNFJcSJdTKRm9PeWwQP5tObPnVO3RnlO151Qtk7al2kRvHs9DcTD7DNGF8k8phOFGGd64jxcOm9WfAbMtLmB0OIWMrtophf-9-QOOTY2X</recordid><startdate>20100715</startdate><enddate>20100715</enddate><creator>Aroutiounian, V.M.</creator><creator>Gambaryan, K.M.</creator><creator>Soukiassian, P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100715</creationdate><title>Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface</title><author>Aroutiounian, V.M. ; Gambaryan, K.M. ; Soukiassian, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-4e2f3ef2f4b0b9e8f5174638024daaa09e6a02d67acfe71c30108288c5978da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Antimony</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Density</topic><topic>Density functional calculations</topic><topic>Exact sciences and technology</topic><topic>Growth</topic><topic>III-V semiconductors</topic><topic>Indium arsenide</topic><topic>Liquid phase epitaxy</topic><topic>Mathematical analysis</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Phosphorus</topic><topic>Physics</topic><topic>Pits</topic><topic>Quantum dots</topic><topic>Scanning electron microscopy</topic><topic>Self-assembly</topic><topic>Strain-induced quantum dots & pits</topic><topic>Wavelengths</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aroutiounian, V.M.</creatorcontrib><creatorcontrib>Gambaryan, K.M.</creatorcontrib><creatorcontrib>Soukiassian, P.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Aroutiounian, V.M.</au><au>Gambaryan, K.M.</au><au>Soukiassian, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface</atitle><jtitle>Surface science</jtitle><date>2010-07-15</date><risdate>2010</risdate><volume>604</volume><issue>13</issue><spage>1127</spage><epage>1134</epage><pages>1127-1134</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><coden>SUSCAS</coden><abstract>InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform infrared spectroscopy, X-ray diffraction and total energy calculations. QDs average density ranges from 5 to 7
×
10
9
cm
−
2, with heights and widths having a Gaussian distribution with sizes from 5
nm to 15
nm and 10
nm to 40
nm respectively. The average pits density is (2–6)
×
10
10
cm
−
2 with dimensions ranging from 5–30
nm in width and depth. We also find a shift in the absorption edge towards the longer wavelengths together with broadening towards shorter wavelengths indicating that these QDs and lateral overgrown nano-pits are grown at the n-InAs/p-InAsSbP heterojunction interface. Together with total energy calculations, the results indicate that lattice mismatch ratio plays a central role in the growth of these strain-induced nano-objects.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2010.03.027</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0039-6028 |
| ispartof | Surface science, 2010-07, Vol.604 (13), p.1127-1134 |
| issn | 0039-6028 1879-2758 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Antimony Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Density Density functional calculations Exact sciences and technology Growth III-V semiconductors Indium arsenide Liquid phase epitaxy Mathematical analysis Nanocomposites Nanomaterials Nanostructure Phosphorus Physics Pits Quantum dots Scanning electron microscopy Self-assembly Strain-induced quantum dots & pits Wavelengths |
| title | Competing nucleation mechanisms and growth of InAsSbP quantum dots and nano-pits on the InAs(100) surface |
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