High-Performance Visible Semiconductor Lasers Operating at 630 nm
A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode...
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| Veröffentlicht in: | IEEE photonics journal 2010-08, Vol.2 (4), p.563-570 |
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| container_end_page | 570 |
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| container_title | IEEE photonics journal |
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| creator | Bocang Qiu Kowalski, O P McDougall, Stewart Schmidt, B Marsh, John H |
| description | A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications. |
| doi_str_mv | 10.1109/JPHOT.2010.2051022 |
| format | Article |
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The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. 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(IEEE) Aug 2010</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-5a682a70d477bb86569d28088c7d6c21b617e4ce770536be313bd78a83d7573c3</citedby><cites>FETCH-LOGICAL-c393t-5a682a70d477bb86569d28088c7d6c21b617e4ce770536be313bd78a83d7573c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5471171$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27612,27903,27904,54911</link.rule.ids></links><search><creatorcontrib>Bocang Qiu</creatorcontrib><creatorcontrib>Kowalski, O P</creatorcontrib><creatorcontrib>McDougall, Stewart</creatorcontrib><creatorcontrib>Schmidt, B</creatorcontrib><creatorcontrib>Marsh, John H</creatorcontrib><title>High-Performance Visible Semiconductor Lasers Operating at 630 nm</title><title>IEEE photonics journal</title><addtitle>JPHOT</addtitle><description>A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.</description><subject>Beams (radiation)</subject><subject>Displays</subject><subject>Divergence</subject><subject>InGaAlP</subject><subject>Laser beams</subject><subject>Lasers</subject><subject>low beam divergence</subject><subject>Optical design</subject><subject>Optical materials</subject><subject>Optical waveguides</subject><subject>Photonics</subject><subject>Quantum well lasers</subject><subject>Quantum wells</subject><subject>Red lasers</subject><subject>Ridges</subject><subject>Semiconductor lasers</subject><subject>Semiconductor materials</subject><subject>Threshold current</subject><subject>Threshold currents</subject><subject>Waveguide lasers</subject><issn>1943-0655</issn><issn>1943-0647</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpdkUtP3DAUhaMKJCj0D9BNpC66Cvh97SVChQGNNEhAt5Zj30w9SuKpnVnw7wkMmgWr-9A5R_fqq6oLSi4pJebq4XGxer5kZJ4ZkZQw9q06pUbwhigBR4deypPqeykbQpSh0pxW14u4_tc8Yu5SHtzosf4bS2x7rJ9wiD6NYeenlOulK5hLvdpidlMc17WbasVJPQ7n1XHn-oI_PutZ9XL75_lm0SxXd_c318vGc8OnRjqlmQMSBEDbaiWVCUwTrT0E5RltFQUUHgGI5KpFTnkbQDvNA0jgnp9V9_vckNzGbnMcXH61yUX7sUh5bV2eou_RCqKNDsGA0UwE6IzoPPVtC0EEr4HMWb_3Wduc_u-wTHaIxWPfuxHTrliYTxCacT4rf31RbtIuj_OjlhJNlRIEYFaxvcrnVErG7nAfJfYdkP0AZN8B2U9As-nn3hQR8WCQAigFyt8A4j-JSg</recordid><startdate>20100801</startdate><enddate>20100801</enddate><creator>Bocang Qiu</creator><creator>Kowalski, O P</creator><creator>McDougall, Stewart</creator><creator>Schmidt, B</creator><creator>Marsh, John H</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/JPHOT.2010.2051022</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | IEEE photonics journal, 2010-08, Vol.2 (4), p.563-570 |
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| source | IEEE Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Beams (radiation) Displays Divergence InGaAlP Laser beams Lasers low beam divergence Optical design Optical materials Optical waveguides Photonics Quantum well lasers Quantum wells Red lasers Ridges Semiconductor lasers Semiconductor materials Threshold current Threshold currents Waveguide lasers |
| title | High-Performance Visible Semiconductor Lasers Operating at 630 nm |
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