High-Performance Visible Semiconductor Lasers Operating at 630 nm

High-Performance Visible Semiconductor Lasers Operating at 630 nm

A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode...

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Veröffentlicht in:IEEE photonics journal 2010-08, Vol.2 (4), p.563-570
Hauptverfasser: Bocang Qiu, Kowalski, O P, McDougall, Stewart, Schmidt, B, Marsh, John H
Format: Artikel
Sprache:eng
Schlagworte:
Beams (radiation)
Displays
Divergence
InGaAlP
Laser beams
Lasers
low beam divergence
Optical design
Optical materials
Optical waveguides
Photonics
Quantum well lasers
Quantum wells
Red lasers
Ridges
Semiconductor lasers
Semiconductor materials
Threshold current
Threshold currents
Waveguide lasers
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Beschreibung
Zusammenfassung:A tensile-strained InGaP quantum-well laser structure operating around 630 nm has been designed. The structure offers low threshold current and beam divergence (19° full-width at half-maximum (FWHM) or 34° at 1/e 2 ) simultaneously by incorporating a V-profile layer within the waveguide. Single-mode lasers (630 nm) were fabricated and tested. The threshold current for coated 1-mm-long and 3-m-wide ridge lasers is only 30 mA, and the slope efficiency is 1.04 W/A. This level of performance makes the lasers ideal for display applications.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2010.2051022