Simulation of electrical parameters of new design of SLHC silicon sensors for large radii

Simulation of electrical parameters of new design of SLHC silicon sensors for large radii

As a result of the high luminosity phase of the SLHC, for CMS a tracking system with very high granularity is mandatory and the sensors will have to withstand an extreme radiation environment of up to 10 16 part/ 2. On this basis, a new geometry with silicon short strip sensors (strixels) is propose...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2010-05, Vol.617 (1), p.563-564
Hauptverfasser: Militaru, O., Bergauer, T., Bergholz, M., Blüm, P., de Boer, W., Borras, K., Cortina Gil, E., Dierlamm, A., Dragicevic, M., Eckstein, D., Erfle, J., Fernandez, M., Feld, L., Frey, M., Friedl, M., Fretwurst, E., Gaubas, E., Gonzalez, F.J., Grabiec, P., Grodner, M., Hartmann, F., Hänsel, S., Hoffmann, K.-H., Hrubec, J., Jaramillo, R., Karpinski, W., Kazukauskas, V., Klein, K., Khomenkov, V., Klanner, R., Krammer, M., Kucharski, K., Lange, W., Lemaitre, V., Moya, D., Marczewski, J., Mussgiller, A., Rodrigo, T., Müller, T., Sammet, J., Schleper, P., Schwandt, J., Simonis, H.-J., Srivastava, A., Steinbrück, G., Tomaszewski, D., Sakalauskas, S., Storasta, J., Vaitkus, J., Lopez Virto, A., Vila, I., Zasinas, E.
Format: Artikel
Sprache:eng
Schlagworte:
Accelerators
Computer programs
Packages
Semiconductors
Sensors
Silicon
Silicon detectors
Simulation
Strip
Strixel
TCAD simulations
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Beschreibung
Zusammenfassung:As a result of the high luminosity phase of the SLHC, for CMS a tracking system with very high granularity is mandatory and the sensors will have to withstand an extreme radiation environment of up to 10 16 part/ 2. On this basis, a new geometry with silicon short strip sensors (strixels) is proposed. To understand their performances, test geometries are developed whose parameters can be verified and optimized using simulation of semiconductor structures. We have used the TCAD-ISE (SYNOPSYS package) software in order to simulate the main electrical parameters of different strip geometries, for p-in-n-type wafers.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2009.09.102