Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

A mixed self‐assembled monolayer containing aliphatic and electron‐accepting (C60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of t...

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Veröffentlicht in:Advanced materials (Weinheim) 2010-06, Vol.22 (23), p.2525-2528
Hauptverfasser: Burkhardt, Martin, Jedaa, Abdesselam, Novak, Michael, Ebel, Alexander, Voïtchovsky, Kislon, Stellacci, Francesco, Hirsch, Andreas, Halik, Marcus
Format: Artikel
Sprache:eng
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Zusammenfassung:A mixed self‐assembled monolayer containing aliphatic and electron‐accepting (C60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201000030