Surface-plasma-enhanced quantum efficiency of a Ag-Ti-n-GaAs grating photodiode

Surface-plasma-enhanced quantum efficiency of a Ag-Ti-n-GaAs grating photodiode

An array of Ag-Ti-n-GaAs grating photodiodes was designed and fabricated, with each diode having an active area with a diameter of 400 microm. Both electrical and optical characterizations were performed. We have made two experimental observations concerning (1) the surface-plasma-enhanced detectivi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied optics (2004) 1991-07, Vol.30 (21), p.2935-2937
Hauptverfasser: Rahman, M, Karakashian, A S, Broude, S, Gladden, D
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An array of Ag-Ti-n-GaAs grating photodiodes was designed and fabricated, with each diode having an active area with a diameter of 400 microm. Both electrical and optical characterizations were performed. We have made two experimental observations concerning (1) the surface-plasma-enhanced detectivity as a function of wavelength for 30 degrees angle of incidence and (2) the offset in angle between the reflectivity minimum and the current maximum at the surface-plasma resonance.
ISSN:1559-128X
DOI:10.1364/AO.30.002935