Low‐Voltage UV‐Electroluminescence from ZnO‐Nanowire Array/p‐GaN Light‐Emitting Diodes

UV LEDs: The fabrication of an ITO/ZnO‐nanowires/p‐GaN/In‐Ga LED structure is reported with an active emitting layer made of high‐quality epitaxial ZnO grown electrochemically from a solution at low temperature (85 °C). A narrow ultra‐violet electroluminescence centered at 397 nm is obtained at room temperature starting at an applied forward bias of 4.4 V (see figure). The emission is of high brightness and stable at low applied voltages beyond 6 V.