Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Sev...

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Veröffentlicht in:Nano letters 2010-08, Vol.10 (8), p.2891-2896
Hauptverfasser: Feng, X. L, Matheny, M. H, Zorman, C. A, Mehregany, M, Roukes, M. L
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Sprache:eng
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Zusammenfassung:We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ∼20 nm and lateral switching gaps as narrow as ∼10 nm. Very low switch-on voltages are obtained, from a few volts down to ∼1 V level. Two-terminal, contact-mode “hot” switching with high on/off ratios (>102 or 103) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl1009734