Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires

We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb2Te3) nanowires with diameters in the range of 20−100 nm. Temperature-dependent resistivity and thermoelectric power (TEP) measurements indicate hole dominant diffu...

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Veröffentlicht in:	Nano letters 2010-08, Vol.10 (8), p.3037-3040
Hauptverfasser:	Zuev, Yuri M, Lee, Jin Seok, Galloy, Clément, Park, Hongkun, Kim, Philip
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Magnetic properties and materials Magnetic properties of nanostructures Materials science Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Physics Quantum wires
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Beschreibung
Zusammenfassung:	We report measurements of electronic, thermoelectric, and galvanomagnetic properties of individual single crystal antimony telluride (Sb2Te3) nanowires with diameters in the range of 20−100 nm. Temperature-dependent resistivity and thermoelectric power (TEP) measurements indicate hole dominant diffusive thermoelectric generation with an enhancement of the TEP for smaller diameter wires up to 110 μV/K at T = 300 K. We measure the magnetoresistance in magnetic fields both parallel and perpendicular to the nanowire [110] axis, where strong anisotropic positive magnetoresistance behavior was observed.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl101505q