Effect of boron gettering on minority-carrier quality for FZ and CZ Si substrates
The gettering effect on boron-diffused FZ and CZ Si substrates was investigated by effective lifetime measurement with a chemical passivation technique. After removal of the boron-diffused layers, the effective lifetime increased about two times higher than initial values for p-type FZ Si substrates...
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Veröffentlicht in: | Solar energy materials and solar cells 1997-11, Vol.48 (1), p.145-150 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The gettering effect on boron-diffused FZ and CZ Si substrates was investigated by effective lifetime measurement with a chemical passivation technique. After removal of the boron-diffused layers, the effective lifetime increased about two times higher than initial values for p-type FZ Si substrates. However, thermal processes in O
2 and N
2 after boron diffusion degraded the effective lifetime drastically for both the substrates. These results suggest that lifetime killer impurities were gettered at defects in the P
+-layers heavily doped by boron diffusion and diffused out into bulk regions because of lowering surface B concentration by the thermal processes. Heavy B concentration is needed to getter lifetime killer impurities. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/S0927-0248(97)00086-X |