Growth and structure control of HfO sub(2-x) films with cubic and tetragonal structures obtained by ion beam assisted deposition

Growth and structure control of HfO sub(2-x) films with cubic and tetragonal structures obtained by ion beam assisted deposition

Growth of hafnium oxide films on water-cooled Si (100) substrates by ion beam assisted deposition, under conditions of oxygen starvation, using hafnium vapor and an oxygen ion beam was presented. The growth of the films occured under three different conditions which were high-energy ion bombardment,...

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Veröffentlicht in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-01, Vol.20 (2), p.549-554
Hauptverfasser: Manory, Rafael R, Mori, Takanori, Shimizu, Ippei, Miyake, Shoji, Kimmel, Giora
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Crystal structure
Film growth
Hafnium compounds
Hardness
Ion beam assisted deposition
Ion beams
Lattice constants
Stoichiometry
Structure (composition)
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Zusammenfassung:Growth of hafnium oxide films on water-cooled Si (100) substrates by ion beam assisted deposition, under conditions of oxygen starvation, using hafnium vapor and an oxygen ion beam was presented. The growth of the films occured under three different conditions which were high-energy ion bombardment, oxygen starvation, and very cold substrates. Analysis of the films was done using x-ray photoelectron spectroscopy and x-ray diffraction.
ISSN:0734-2101