Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs
We report compositional dependencies of the 2d–3d growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and V/III ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional depe...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-09, Vol.19 (5), p.1948-1952 |
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| container_end_page | 1952 |
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| container_issue | 5 |
| container_start_page | 1948 |
| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 19 |
| creator | Cunningham, J. E. Dinu, M. Shah, J. Quochi, F. Kilper, D. Jan, W. Y. Williams, M. D. Mills, A. Henderson, W. E. |
| description | We report compositional dependencies of the
2d–3d
growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and V/III ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional dependence of GaAsSb quantum wells and confinement in heterojunctions are reported. |
| doi_str_mv | 10.1116/1.1406153 |
| format | Article |
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2d–3d
growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and V/III ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional dependence of GaAsSb quantum wells and confinement in heterojunctions are reported.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1406153</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><subject>Antimony ; Desorption ; Electron transitions ; Heterojunctions ; Laser applications ; Molecular beam epitaxy ; Photoluminescence ; Segregation (metallography) ; Semiconducting gallium compounds ; Semiconductor growth</subject><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-09, Vol.19 (5), p.1948-1952</ispartof><rights>American Vacuum Society</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-47f17a8c90a43922e7f1492ef1524ffdf583ddf064da9d75d224ca7d5e2b006d3</citedby><cites>FETCH-LOGICAL-c364t-47f17a8c90a43922e7f1492ef1524ffdf583ddf064da9d75d224ca7d5e2b006d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,794,4512,27924,27925</link.rule.ids></links><search><creatorcontrib>Cunningham, J. E.</creatorcontrib><creatorcontrib>Dinu, M.</creatorcontrib><creatorcontrib>Shah, J.</creatorcontrib><creatorcontrib>Quochi, F.</creatorcontrib><creatorcontrib>Kilper, D.</creatorcontrib><creatorcontrib>Jan, W. Y.</creatorcontrib><creatorcontrib>Williams, M. D.</creatorcontrib><creatorcontrib>Mills, A.</creatorcontrib><creatorcontrib>Henderson, W. E.</creatorcontrib><title>Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>We report compositional dependencies of the
2d–3d
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2d–3d
growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and V/III ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional dependence of GaAsSb quantum wells and confinement in heterojunctions are reported.</abstract><doi>10.1116/1.1406153</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0734-211X |
| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-09, Vol.19 (5), p.1948-1952 |
| issn | 0734-211X 1071-1023 1520-8567 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_746241057 |
| source | AIP Journals Complete |
| subjects | Antimony Desorption Electron transitions Heterojunctions Laser applications Molecular beam epitaxy Photoluminescence Segregation (metallography) Semiconducting gallium compounds Semiconductor growth |
| title | Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs |
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