Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs

Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs

We report compositional dependencies of the 2d–3d growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and V/III ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional depe...

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Veröffentlicht in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-09, Vol.19 (5), p.1948-1952
Hauptverfasser: Cunningham, J. E., Dinu, M., Shah, J., Quochi, F., Kilper, D., Jan, W. Y., Williams, M. D., Mills, A., Henderson, W. E.
Format: Artikel
Sprache:eng
Schlagworte:
Antimony
Desorption
Electron transitions
Heterojunctions
Laser applications
Molecular beam epitaxy
Photoluminescence
Segregation (metallography)
Semiconducting gallium compounds
Semiconductor growth
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Zusammenfassung:We report compositional dependencies of the 2d–3d growth mode transition for GaAsSb on GaAs. In addition, Sb incorporation, desorption, and segregation versus growth temperature and V/III ratio are measured by secondary-ion-mass spectroscopy. Photoluminescence investigations of Sb compositional dependence of GaAsSb quantum wells and confinement in heterojunctions are reported.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1406153