A comparison of the properties of chemical vapor transport deposited CdS thin films using different precursors

CdS thin films were deposited from chemically precipitated and high purity CdS precursors adopting chemical vapor transport by gas (CVTG) method. In the present study, chemically precipitated and high purity CdS with CdCl 2 flux was used as precursors for the chemical vapor transport. The structural, electrical, optical and opto-electronic properties varied depending on the type of the precursors used for chemical vapor transport and the condensation temperature. In both the cases two distinct kinds of films (intrinsic-CdS and semiconducting CdS) were formed depending on the film condensation temperature. The intrinsic films showed a band gap close to 2.45 eV, where as the n-type films exhibited band gaps below 2 eV.