CIS and CIGS based photovoltaic structures developed from electrodeposited precursors

In the present study we report the electrodeposition and characterization of CIS and CIGS thin films and a post-deposition thermal processing in vacuum to improve the film stoichiometry by incorporating additional In, Ga and Se. Different kinds of analyses showed that CIS as well as CIGS possess a v...

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Veröffentlicht in:Solar energy materials and solar cells 1999, Vol.59 (1), p.125-135
Hauptverfasser: Sebastian, P.J, Calixto, M.E, Bhattacharya, R.N, Noufi, Rommel
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Sprache:eng
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Zusammenfassung:In the present study we report the electrodeposition and characterization of CIS and CIGS thin films and a post-deposition thermal processing in vacuum to improve the film stoichiometry by incorporating additional In, Ga and Se. Different kinds of analyses showed that CIS as well as CIGS possess a very thin In-rich surface n-layer. The formation and characterization of solar cell structures from the electrodeposited precursor with the configuration glass/Cr/Mo/CIS(CIGS)/CdS/ZnO/MgF 2 is also reported. The optoelectronic properties such as Voc, Isc, FF, η etc. of the cells are presented.
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(99)00037-9