Gas source molecular beam epitaxy of high quality Al sub(x)Ga sub(1-x)N (0 less than or equal to x less than or equal to 1) on Si(111)

Gas source molecular beam epitaxy of high quality Al sub(x)Ga sub(1-x)N (0 less than or equal to x less than or equal to 1) on Si(111)

An overview is given on growth procedures resulting in high quality AlGaN on Si substrates. Gas source molecular beam epitaxy (MBE) growth under stoichiometric conditions allowed to control electrical properties of layers and structures. Light emitting diodes based on GaN on Si operate at low curren...

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Hauptverfasser: Nikishin, S, Kipshidze, G, Kuryatkov, V, Choi, K, Gherasoiu, Iu, Grave De Peralta, L, Zubrilov, A, Tretyakov, V, Copeland, K, Prokofyeva, T, Holtz, M, Asomoza, R, Kudryavtsev, Yu, Temkin, H
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Ammonia
Cathodoluminescence
Light emitting diodes
Molecular beam epitaxy
Optical properties
Semiconducting silicon
Semiconductor growth
Semiconductor superlattices
Spectroscopy
Temperature
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Zusammenfassung:An overview is given on growth procedures resulting in high quality AlGaN on Si substrates. Gas source molecular beam epitaxy (MBE) growth under stoichiometric conditions allowed to control electrical properties of layers and structures. Light emitting diodes based on GaN on Si operate at low currents and forward voltage.
ISSN:0734-211X