Initial study on copper CMP slurry chemistries

Initial study on copper CMP slurry chemistries

Chemical mechanical polishing (CMP) of copper has been investigated with suspended silica and alumina abrasives using various slurry chemistries. The characteristics of these chemistries were studied by electrochemical d.c. polarization and a.c. impedance measurements. Problems and directions relate...

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Veröffentlicht in:Thin solid films 1995-10, Vol.266 (2), p.238-244
Hauptverfasser: Carpio, Ronald, Farkas, Janos, Jairath, Rahul
Format: Artikel
Sprache:eng
Schlagworte:
Abrasives
Alumina
Applied sciences
Chemical polishing
Copper
Cross-disciplinary physics: materials science
rheology
Dielectric materials
Dry etching
Electric impedance measurement
Exact sciences and technology
Materials science
Metals. Metallurgy
Physics
Polishing
Silica
Surface treatments
Tungsten
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Zusammenfassung:Chemical mechanical polishing (CMP) of copper has been investigated with suspended silica and alumina abrasives using various slurry chemistries. The characteristics of these chemistries were studied by electrochemical d.c. polarization and a.c. impedance measurements. Problems and directions related to the formulation of copper CMP slurries are discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(95)06649-7