Transient reflectivity measurements and heat transfer modeling in laser annealing of semiconductor films

Melting and solidification of a silicon film by continuous wave laser beam irradiation has been studied. The silicon film melting and recrystallization is controlled by the temperature distribution in the semiconductor. Numerical calculations have been carried out for a range of laser beam parameters and material translational speeds. The results for the melt pool size have been compared with experimental data. The temperature field development has also been monitored with localized reflectivity measurements. Experimental and predicted transient reflectivity distributions have been compared.