Growth of ZnSe on GaAs by close spaced vapor transport

Close spaced vapor transport (CSVT) has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. The growth rate is studied in relation to variation in deposition duration and the temperature of the substrate. Calculations on the basis of the two existing models, the diffusion-limite...

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Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-09, Vol.14 (4), p.369-377
1. Verfasser:	Perrier, Gérard
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Film growth Mass spectrometry Mass transfer Mathematical models Reaction kinetics Semiconducting selenium compounds Semiconducting zinc compounds Thermodynamics
Online-Zugang:	Volltext
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