Growth of ZnSe on GaAs by close spaced vapor transport

Close spaced vapor transport (CSVT) has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. The growth rate is studied in relation to variation in deposition duration and the temperature of the substrate. Calculations on the basis of the two existing models, the diffusion-limited model and the reaction-limited model, are compared with the experimental results. It is shown that these two models reflect the same process of decomposition-recomposition. On the basis of secondary ions mass spectrometry experiments, it is proposed that intermediates must be considered to participate in the transport reaction.