Growth of ZnSe on GaAs by close spaced vapor transport
Close spaced vapor transport (CSVT) has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. The growth rate is studied in relation to variation in deposition duration and the temperature of the substrate. Calculations on the basis of the two existing models, the diffusion-limite...
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| Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1992-09, Vol.14 (4), p.369-377 |
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| container_issue | 4 |
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| container_title | Materials science & engineering. B, Solid-state materials for advanced technology |
| container_volume | 14 |
| creator | Perrier, Gérard |
| description | Close spaced vapor transport (CSVT) has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. The growth rate is studied in relation to variation in deposition duration and the temperature of the substrate. Calculations on the basis of the two existing models, the diffusion-limited model and the reaction-limited model, are compared with the experimental results. It is shown that these two models reflect the same process of decomposition-recomposition. On the basis of secondary ions mass spectrometry experiments, it is proposed that intermediates must be considered to participate in the transport reaction. |
| doi_str_mv | 10.1016/0921-5107(92)90077-M |
| format | Article |
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Calculations on the basis of the two existing models, the diffusion-limited model and the reaction-limited model, are compared with the experimental results. It is shown that these two models reflect the same process of decomposition-recomposition. On the basis of secondary ions mass spectrometry experiments, it is proposed that intermediates must be considered to participate in the transport reaction.</abstract><pub>Elsevier B.V</pub><doi>10.1016/0921-5107(92)90077-M</doi><tpages>9</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0921-5107 |
| ispartof | Materials science & engineering. B, Solid-state materials for advanced technology, 1992-09, Vol.14 (4), p.369-377 |
| issn | 0921-5107 1873-4944 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_746108333 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Chemical vapor deposition Film growth Mass spectrometry Mass transfer Mathematical models Reaction kinetics Semiconducting selenium compounds Semiconducting zinc compounds Thermodynamics |
| title | Growth of ZnSe on GaAs by close spaced vapor transport |
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