Residual stresses and scaling CNTD SiC to larger sizes

Recently Dutta et al. reported impressive strengths obtained in very fine (0.01 to 0.1 mu m) grain SiC made by the CNTD process. They also noted evidence for substantial residual stresses in these small rods of SiC deposited on W, which were attributed to the SiC and not to any effects of the W-core. This note presents evidence supporting and extending these findings, and illustrating some of the challenges of scaling this process to larger specimen sizes.