Valence band offset at the CdS/CdTe interface
Wurtzite CdS was grown by molecular beam epitaxy on CdTe (1̄1̄1̄) B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe (1̄1̄1̄) B is used as a substrate. No reaction is...
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| Veröffentlicht in: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-07, Vol.20 (4), p.1777-1780 |
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| container_issue | 4 |
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| container_title | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures |
| container_volume | 20 |
| creator | Boieriu, P. Sporken, R. Sivananthan, S. |
| description | Wurtzite CdS was grown by molecular beam epitaxy on
CdTe
(1̄1̄1̄)
B
and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when
CdTe
(1̄1̄1̄)
B
is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment. |
| doi_str_mv | 10.1116/1.1491989 |
| format | Article |
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CdTe
(1̄1̄1̄)
B
and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when
CdTe
(1̄1̄1̄)
B
is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.</description><identifier>ISSN: 0734-211X</identifier><identifier>ISSN: 1071-1023</identifier><identifier>EISSN: 1520-8567</identifier><identifier>DOI: 10.1116/1.1491989</identifier><identifier>CODEN: JVTBD9</identifier><language>eng</language><subject>Band structure ; Binding energy ; Cadmium sulfide ; Epitaxial growth ; Fermi level ; Molecular beam epitaxy ; Semiconducting cadmium telluride ; Transmission electron microscopy ; X ray photoelectron spectroscopy</subject><ispartof>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-07, Vol.20 (4), p.1777-1780</ispartof><rights>American Vacuum Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c395t-e76b7ec4c899b964f346336fa91dbaddc113f59726a18d3e9d481dffab61eb7e3</citedby><cites>FETCH-LOGICAL-c395t-e76b7ec4c899b964f346336fa91dbaddc113f59726a18d3e9d481dffab61eb7e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,790,4498,23909,23910,25118,27901,27902</link.rule.ids></links><search><creatorcontrib>Boieriu, P.</creatorcontrib><creatorcontrib>Sporken, R.</creatorcontrib><creatorcontrib>Sivananthan, S.</creatorcontrib><title>Valence band offset at the CdS/CdTe interface</title><title>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</title><description>Wurtzite CdS was grown by molecular beam epitaxy on
CdTe
(1̄1̄1̄)
B
and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when
CdTe
(1̄1̄1̄)
B
is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.</description><subject>Band structure</subject><subject>Binding energy</subject><subject>Cadmium sulfide</subject><subject>Epitaxial growth</subject><subject>Fermi level</subject><subject>Molecular beam epitaxy</subject><subject>Semiconducting cadmium telluride</subject><subject>Transmission electron microscopy</subject><subject>X ray photoelectron spectroscopy</subject><issn>0734-211X</issn><issn>1071-1023</issn><issn>1520-8567</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNp90MFLwzAYBfAgCs7pwf-gN1Holq9J0-Qoxakw8OAUbyFNvmCla2eSCf73Tjr0IHh6l997h0fIOdAZAIg5zIArUFIdkAmUBc1lKapDMqEV43kB8HJMTmJ8o5SKkrEJyZ9Nh73FrDG9ywbvI6bMpCy9Yla7x3ntVpi1fcLgjcVTcuRNF_Fsn1PytLhZ1Xf58uH2vr5e5papMuVYiaZCy61UqlGCe8YFY8IbBa4xzlkA5ktVFcKAdAyV4xKc96YRgLsmm5KLcXcThvctxqTXbbTYdabHYRt1xQUFWUi-k5ejtGGIMaDXm9CuTfjUQPX3Ixr0_pGdvRpttG0yqR36H_wxhF-oN87_h_8ufwF23226</recordid><startdate>20020701</startdate><enddate>20020701</enddate><creator>Boieriu, P.</creator><creator>Sporken, R.</creator><creator>Sivananthan, S.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7TC</scope></search><sort><creationdate>20020701</creationdate><title>Valence band offset at the CdS/CdTe interface</title><author>Boieriu, P. ; Sporken, R. ; Sivananthan, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c395t-e76b7ec4c899b964f346336fa91dbaddc113f59726a18d3e9d481dffab61eb7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Band structure</topic><topic>Binding energy</topic><topic>Cadmium sulfide</topic><topic>Epitaxial growth</topic><topic>Fermi level</topic><topic>Molecular beam epitaxy</topic><topic>Semiconducting cadmium telluride</topic><topic>Transmission electron microscopy</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>online_resources</toplevel><creatorcontrib>Boieriu, P.</creatorcontrib><creatorcontrib>Sporken, R.</creatorcontrib><creatorcontrib>Sivananthan, S.</creatorcontrib><collection>CrossRef</collection><collection>Mechanical Engineering Abstracts</collection><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Boieriu, P.</au><au>Sporken, R.</au><au>Sivananthan, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Valence band offset at the CdS/CdTe interface</atitle><jtitle>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures</jtitle><date>2002-07-01</date><risdate>2002</risdate><volume>20</volume><issue>4</issue><spage>1777</spage><epage>1780</epage><pages>1777-1780</pages><issn>0734-211X</issn><issn>1071-1023</issn><eissn>1520-8567</eissn><coden>JVTBD9</coden><abstract>Wurtzite CdS was grown by molecular beam epitaxy on
CdTe
(1̄1̄1̄)
B
and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when
CdTe
(1̄1̄1̄)
B
is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.</abstract><doi>10.1116/1.1491989</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0734-211X |
| ispartof | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-07, Vol.20 (4), p.1777-1780 |
| issn | 0734-211X 1071-1023 1520-8567 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_746018284 |
| source | AIP Journals Complete |
| subjects | Band structure Binding energy Cadmium sulfide Epitaxial growth Fermi level Molecular beam epitaxy Semiconducting cadmium telluride Transmission electron microscopy X ray photoelectron spectroscopy |
| title | Valence band offset at the CdS/CdTe interface |
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