Valence band offset at the CdS/CdTe interface

Wurtzite CdS was grown by molecular beam epitaxy on CdTe (1̄1̄1̄) B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe (1̄1̄1̄) B is used as a substrate. No reaction is...

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Veröffentlicht in:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2002-07, Vol.20 (4), p.1777-1780
Hauptverfasser:	Boieriu, P., Sporken, R., Sivananthan, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Band structure Binding energy Cadmium sulfide Epitaxial growth Fermi level Molecular beam epitaxy Semiconducting cadmium telluride Transmission electron microscopy X ray photoelectron spectroscopy
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Beschreibung
Zusammenfassung:	Wurtzite CdS was grown by molecular beam epitaxy on CdTe (1̄1̄1̄) B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe (1̄1̄1̄) B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A. The valence band offset was measured by XPS and indicates a type-I alignment.
ISSN:	0734-211X 1071-1023 1520-8567
DOI:	10.1116/1.1491989