Effect of H sub(2) on the etch profile of InP/InGaAsP alloys in Cl sub(2)/Ar/H sub(2 ) inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

Effect of H sub(2) on the etch profile of InP/InGaAsP alloys in Cl sub(2)/Ar/H sub(2 ) inductively coupled plasma reactive ion etching chemistries for photonic device fabrication

The positive impact of the addition of H sub(2) to a Cl sub(2)/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H sub(2) balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a...

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Hauptverfasser: Rommel, Sean L, Jang, Jae-Hyung, Lu, Wu, Cueva, Gabriel, Zhou, Ling, Adesida, Ilesanmi, Pajer, Gary, Whaley, Ralph, Lepore, Allen, Schellenbarger, Zane, Abeles, Joseph H
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Argon
Chlorine
Composition effects
Electronic equipment manufacture
Hydrogen
Inductively coupled plasma
Reactive ion etching
Scanning electron microscopy
Semiconducting indium compounds
Waveguides
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Zusammenfassung:The positive impact of the addition of H sub(2) to a Cl sub(2)/Ar process for the etching of InP-based heterostructures was demonstrated. It was found that the addition of H sub(2) balances the physical and chemical components, resulting in three distinct etch profiles. A racetrack resonator with a quality factor of 8000 was also demonstrated.
ISSN:0734-211X