Strain relaxation in GaAs islands on GaP(001)

The relaxation of elastic strain energy in GaAs islands grown on GaP(001) substrate was evaluated by using the Keating method based on the idea that the strain is relaxed at the free edges of islands. The calculation reveals that the strain is relaxed more efficiently in narrower islands. This is co...

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Veröffentlicht in:	Applied surface science 1995-02, Vol.84 (2), p.119-124
Hauptverfasser:	Yago, Haruo, Nomura, Takashi, Ishikawa, Kenji
Format:	Artikel
Sprache:	eng
Schlagworte:	Calculations Cross-disciplinary physics: materials science rheology Exact sciences and technology Interfacial energy Lattice constants Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Monolayers Physics Relaxation processes Semiconducting gallium compounds Strain
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container_title	Applied surface science
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creator	Yago, Haruo Nomura, Takashi Ishikawa, Kenji
description	The relaxation of elastic strain energy in GaAs islands grown on GaP(001) substrate was evaluated by using the Keating method based on the idea that the strain is relaxed at the free edges of islands. The calculation reveals that the strain is relaxed more efficiently in narrower islands. This is consistent with the experimental results on GaAs/GaP grown by molecular beam epitaxy (MBE). An optimum size to minimize the energy was obtained when we took the surface energy into account.
doi_str_mv	10.1016/0169-4332(94)00541-9
format	Article
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source	ScienceDirect Journals (5 years ago - present)
subjects	Calculations Cross-disciplinary physics: materials science rheology Exact sciences and technology Interfacial energy Lattice constants Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Monolayers Physics Relaxation processes Semiconducting gallium compounds Strain
title	Strain relaxation in GaAs islands on GaP(001)
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