Strain relaxation in GaAs islands on GaP(001)

Strain relaxation in GaAs islands on GaP(001)

The relaxation of elastic strain energy in GaAs islands grown on GaP(001) substrate was evaluated by using the Keating method based on the idea that the strain is relaxed at the free edges of islands. The calculation reveals that the strain is relaxed more efficiently in narrower islands. This is co...

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Veröffentlicht in:Applied surface science 1995-02, Vol.84 (2), p.119-124
Hauptverfasser: Yago, Haruo, Nomura, Takashi, Ishikawa, Kenji
Format: Artikel
Sprache:eng
Schlagworte:
Calculations
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Interfacial energy
Lattice constants
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Monolayers
Physics
Relaxation processes
Semiconducting gallium compounds
Strain
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Zusammenfassung:The relaxation of elastic strain energy in GaAs islands grown on GaP(001) substrate was evaluated by using the Keating method based on the idea that the strain is relaxed at the free edges of islands. The calculation reveals that the strain is relaxed more efficiently in narrower islands. This is consistent with the experimental results on GaAs/GaP grown by molecular beam epitaxy (MBE). An optimum size to minimize the energy was obtained when we took the surface energy into account.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(94)00541-9